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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N03CLE NP80N03DLE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK)
FEATURES
* Channel Temperature 175 degree rated * Super Low On-state Resistance RDS(on)1 = 7.0 m MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 m MAX. (VGS = 5 V, ID = 40 A) * Low Ciss : Ciss = 2600 pF TYP. * Built-in Gate Protection Diode
5
NP80N03ELE NP80N03KLE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 20 80 320 1.8 120 175 -55 to +175 50 / 40 / 9 2.5 / 160 / 400
V V A A W W C C A mJ (TO-262)
Drain Current (Pulse)
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
IAS EAS
Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW 10 s, Duty cycle 1% 3. Starting Tch = 25C, RG = 25 , VGS = 20 0 V (see Figure 4.)
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D14032EJ4V0DS00 (4th edition) Date Published December 2002 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
1999, 2000
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate to Source Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge 1 Total Gate Charge 2 Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG1 QG2 QGS QGD VF(S-D) trr Qrr VDD = 24 V, VGS = 10 V, ID = 80 A VDD = 24 V VGS = 5 V ID = 80 A IF = 80 A, VGS = 0 V IF = 80 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A VGS = 5 V, ID = 40 A VGS = 4.5 V, ID = 40 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 40 A VGS = 10 V RG = 1 1.5 20 2.0 41 5.3 6.8 7.5 2600 590 270 20 12 60 14 48 28 10 14 1.0 34 22 7.0 9.0 11 3900 890 490 44 31 120 35 72 42 MIN. TYP. MAX. 10 10 2.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D14032EJ4V0DS
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
TYPICAL CHARACTERISTICS (TA = 25C)
Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
100 80 60 40 20 0
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200
0
25
50
75
100 125 150 175 200
TC - Case Temperature - C
TC - Case Temperature - C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 450
Figure3. FORWARD BIAS SAFE OPERATING AREA
EAS- Single Avalanche Energy - mJ
1000 ID(pulse)
PW
400 350 300 250 200
400 mJ
ID - Drain Current - A
100
R tV (a
) (on DS GS
d ite ) Lim10 V =
ID(DC)
DC Po Lim wer ite Dis sip d ati on
10 0 s 1m s
=1
0
s
10
IAS = 9 A 40 A 50 A 160 mJ
150 100 50 2.5 mJ 0 25 50 75 100 125 150 175
1 TC = 25C Single pulse 0.1 0.1 1 10 VDS - Drain to Source Voltage - V 100
Starting Tch - Starting Channel Temperature - C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3C/W
10
1
Rth(ch-C) = 1.25C/W
0.1 Single pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D14032EJ4V0DS
3
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
Figure6. FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
ID - Drain Current - A
Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 350 Pulsed VGS = 10 V
ID - Drain Current - A
100
300 250 200 150 100 50 4.5 V
10
1
TA = -50C 25C 75C 150C 175C
5V
0.1
1
2
3
4
5
6
0 0.0
1.0
2.0
3.0
4.0
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed 10 TA = 175C 75C 25C -50C
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed
RDS(on) - Drain to Source On-state Resistance - m
| yfs | - Forward Transfer Admittance - S
40
30 20 10
1
0.1
ID = 40 A
0.01 0.01
0.1
1
10
100
0
0
2
4
6
8
10
12
14
16
18
ID - Drain Current - A
VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = VGS ID = 250 A 2.5 2.0 1.5 1.0 0.5 0 -50
RDS(on) - Drain to Source On-state Resistance - m
30
Pulsed
20
10
VGS = 4.5 V 5V 10 V
0
1
10
100
1000
VGS(th) - Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14032EJ4V0DS
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
RDS(on) - Drain to Source On-state Resistance - m
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 12 Pulsed 10 VGS = 4.5 V 5V 10 V 8 6 4 2 0 -50 0 50 100 ID = 40 A 150
Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed
ISD - Diode Forward Current - A
100 VGS = 10 V
10
VGS = 0 V
1
0.1 0
0.5
1.0
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Figure15. SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
10000
1000 tf 100 td(off) td(on) 10 tr
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz Ciss
1000 Coss Crss 100
10
0.1
1
10
100
1 0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
di/dt = 100 A/s VGS = 0 V
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40
VDS - Drain to Source Voltage - V
16 14 VGS VDD = 24 V 15 V 6V 12 10 8 6 4 VDS ID = 80 A 2 30 40 50 60 70 80 0
VGS - Gate to Source Voltage - V
35 30 25 20 15 10 5 0 0 10
100
10
1 0.1
1
10
100
20
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D14032EJ4V0DS
5
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut)
3.00.3
3.60.2
5.9 MIN.
1.00.5
10.6 MAX. 10.0 TYP.
4.8 MAX. 1.30.2 10 TYP.
4.8 MAX. 1.30.2
15.5 MAX.
4 1 2 3
4 123
6.0 MAX.
1.30.2
12.7 MIN.
1.30.2
12.7 MIN.
8.50.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3) TO-263 (MP-25ZJ)
5 4) TO-263 (MP-25ZK)
10 TYP. 4
4.8 MAX. 1.30.2
No plating
10.00.3 7.88 MIN. 4
1.350.3
4.450.2 1.30.2
1.00.5
8.0 TYP.
8.50.2
9.150.3
15.250.5
0.025 to 0.25
1
2
3
5.70.4
1.40.2
0.70.2 2.54 TYP.
R 0.5
TY
P.
TY P.
2.54 TYP.
R 0.8
0.50.2
0.750.2 2.54
0.5
0.2 8o
0 to
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
0.25 1 2 3 1.Gate 2.Drain 3.Source
2.5
4.Fin (Drain)
6
Data Sheet D14032EJ4V0DS
2.540.25
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Remark
Gate Protection Diode
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Source
Data Sheet D14032EJ4V0DS
7
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
* The information in this document is current as of December, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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